Low Temperature Polycrystalline Silicon Thin Film Transistors Flash Memory with Silicon Nanocrystal Dot
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概要
- 論文の詳細を見る
We fabricated a flash memory by embedding a Si nanocrystal dot as the floating node for a low temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT). Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) analyses revealed that the average Si dot size and density were approximately 5 nm and $8.5\times 10^{11}$ cm-2, respectively. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the transfer curve. Furthermore, we evaluated the electronic behavior by varying the bias condition. For an improvement of the retention time and the electronic properties, high-pressure vapor annealing (HPVA), which exhibits even better performance for the fabrication of high-quality flash memory, was employed.
- Japan Society of Applied Physicsの論文
- 2007-07-25
著者
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URAOKA Yukiharu
Nara Institute of Science and Technology
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HAYASHI Tsukasa
Nissin Electric Co.
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YANO Hiroshi
Nara Institute of Science and Technology
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HATAYAMA Tomoaki
Nara Institute of Science and Technology
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Ogata Kiyoshi
Nissin Electric Co. Ltd R&d Laboratories
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Takahashi Eiji
Nissin Electric Co. Ltd R&d Laboratories
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Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Yano Hiroshi
Nara Institute of Science and Techonology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Ichikawa Kazunori
Nara Institute of Science and Techonology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Nara Institute of Science and Techonology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Ichikawa Kazunori
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Ogata Kiyoshi
Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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Hatayama Tomoaki
Nara Institute of Science and Techonology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Takahashi Eiji
Nissin Electric Co., Ltd., 47 Umezu-Takase-cho, Ukyo-ku, Kyoto 615-8686, Japan
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