Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

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概要

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• Degradation of Ga2O3–In2O3–ZnO (GIZO) thin-film transistors (TFTs), which are promising for driving circuits of next-generation displays, was studied. We found a degradation mode that was not observed in silicon TFTs. A parallel shift without any change of the transfer curve was observed under gate voltage stress. Judging from the bias voltage dependences we confirmed that the mode was mainly dominated by a vertical electric field. Thermal distribution was measured to analysis the degradation mechanism. Joule heating caused by drain current was observed; however, a marked acceleration of degradation by drain bias was not found. Therefore, we concluded that Joule heating did not accelerate degradation. Recovery of electrical properties independent of stress voltage were observed.

• 2008-08-25

著者

• URAOKA Yukiharu

  Nara Institute of Science and Technology

• KWON Jang

  Samsung Advanced Institute of Technology

• JUNG Ji

  Samsung Advanced Institute of Technology

• YANO Hiroshi

  Nara Institute of Science and Technology

• HATAYAMA Tomoaki

  Nara Institute of Science and Technology

• Fuyuki Takashi

  Nara Inst. Sci. And Technol. Nara Jpn

• Fujii Mami

  Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Jung Ji

  Samsung Advanced Institute of Technology, Mt. 14-1 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-712, Korea

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