Crystallinity Evaluation by Microwave Photoconductivity Decay in Double-Layered Polycrystalline Silicon Thin Films Crystallized by Solid Green Laser Annealing

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概要

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• The crystallinity of double-layered polycrystalline silicon thin films crystallized by solid green laser annealing (GLADLAX poly-Si) was evaluated in comparison with that of the conventional green-laser-annealed single-layer poly-Si (GLA SL poly-Si) by reflectance peak mapping measurement of microwave photoconductivity decay (μ-PCD), which measures the recombination lifetime of photoexcited carriers. As a result, the anisotropy of the poly-Si was observed as a difference in the reflectance-peak. Furthermore, the upper layer of the GLADLAX poly-Si had a larger microwave reflectance-peak compared with the GLA single-layer poly-Si, and correlation was confirmed between the reflectance-peak of the poly-Si and the electrical performance of thin film transistor (TFT). Thus, it can be said that crystallinty evaluation by μ-PCD measurement are promising for application to next-generation low-temperature poly-Si TFTs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-12-15

著者

• URAOKA Yukiharu

  Nara Institute of Science and Technology

• SUGAWARA Yuta

  Nara Institute of Science and Technology

• YANO Hiroshi

  Nara Institute of Science and Technology

• HATAYAMA Tomoaki

  Nara Institute of Science and Technology

• MIMURA Akio

  National Institute of Advanced Industrial Science and Technology

• Fuyuki Takashi

  Nara Inst. Sci. And Technol. Nara Jpn

• Yano Hiroshi

  Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Fuyuki Takashi

  Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Uraoka Yukiharu

  Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Hatayama Tomoaki

  Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

• Mimura Akio

  National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Tsukuba, Ibaraki 305-8565, Japan

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