Opto-Thermal Analysis of Blue Multi Laser Diode Annealing (BLDA)
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概要
- 論文の詳細を見る
Opto-Thermal analysis of Semiconductor Blue-Multi-Laser-Diode Annealing (BLDA) for amorphous Si (a-Si) film is conducted by varying the irradiation power, the scanning velocity and the beam shape of blue-laser of 445nm. Thermal profiles, maximum temperature of the a-Si film and the melting duration are evaluated. By comparing the simulated results with the experimental results, the excellent controllability of BLDA for arbitrary grain size can be explained consistently by the relation between irradiation time and melting duration. The results are useful to estimate poly-crystallized phase such as micro-polycrystalline Si, polycrystalline Si and anisotropic lateral growth of single-crystal-like Si.
- （社）電子情報通信学会の論文
- 2010-10-01
著者
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NOGUCHI Takashi
University of the Ryukyus
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SHIRAI Katsuya
University of the Ryukyus
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OGINO Yoshiaki
Hitachi Computer Peripheral Co., Ltd.
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SAHOTA Eiji
Hitachi Computer Peripheral Co., Ltd.
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Ogino Yoshiaki
Hitachi Computer Peripheral Co. Ltd.
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Sahota Eiji
Hitachi Computer Peripheral Co. Ltd.
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- Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate
- Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing
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