Grating Metal Structure with Low-$K$ Benzocyclobutene and Electroplated Copper for High-$Q$ Spiral Inductors
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we propose a grating metal structure with low-$K$ benzocyclobutene (BCB) and electroplated copper to increase the $Q$-factor of a spiral inductor. The grating metal structure was fabricated using simple electroplated copper and showed a maximum quality factor ($Q_{\text{max}}$) of 4 nH in spiral inductors, which is 15% more than that in normal spiral inductors with the same metal thickness. From the proposed equivalent lumped element model, the enhancement in quality factor was found to result from the reduction in series resistance, which was caused by the increase in effective current area. This technique can be applied to increasing the $Q$-factor of a spiral inductor in a silicon-based radio-frequency-integrated circuit (RFIC).
- 2006-04-30
著者
-
Kwon Young-se
Department Of E.e. Kaist
-
Yeo Sung-ku
Department Of Electrical Engineering And Computer Science Kaist
-
Shin Seong-ho
Department Of Electrical Engineering And Computer Science Kaist
-
Yeo Sung-Ku
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong, Yusong-Gu, Daejon 305-701, Republic of Korea
-
Shin Seong-Ho
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong, Yusong-Gu, Daejon 305-701, Republic of Korea
-
Kwon Young-Se
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong, Yusong-Gu, Daejon 305-701, Republic of Korea
関連論文
- GaAs/AlGaAs Lensed Light Emitting Diode by the Meltback and Regrowth in Liquid Phase Epitaxy
- Surface-Emitting AlGaAs/GaAs DH LED with Buried-Window Cylindrical Lens : Waves, Optics and Quantum Electronics
- InP/InGaAs/InP Double Hetero-junction Solar Cells with Increased Open-Circuit Voltage
- An InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring Cavity
- A New High Radiance LED Structure with Circular 45° Corner Reflector
- Fabrication of Vertical-Cavity Front-Surface-Emitting Laser Diode (FSELD) Using a Heterojunction Bipolar Transistor Process
- Low-Loss and High-Frequency Interconnection Technology on Membrane Supported by Porous Silicon Post
- Phase-Locked Two-Dimensional Arrays of Vertical Cavity Surface Emitting Lasers
- Grating Metal Structure with Low-K BCB and Electroplated Copper for High-Q Spiral Inductors
- New Fabrication Technology Integrating FETs and Diodes
- Nonlinear Quenching in a Monolithically Integrated Semiconductor Laser Logic Device
- Tapered Sidewall Schottky Diodes with Very Low Taper Angles : A-4: LSI-3 AND JUNCTION DEVICES
- Performance of New Self-Aligned InP/InGaAs Heterojunction Bipolar Transistors Using Crystallographically Defined Emitter Contact Technology
- Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor
- A GaAs Junction-Gate FECFET(J-FECFET) for the Digital Integrated Circuits
- A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition
- A Vertical Integration of GaAs/GaAlAs LED and Vertical FET with Embedded Schottky Electrodes
- Integration of PIN and Vertical Junction Field Effect Transistor for Photodetector Optoelectronic Integrated Circuit
- Fabrication Method of Microlens Array Using Oxidized Porous Silicon Bulk Micromachining and PDMS Replication Molding
- Integrated Twin-Guide Corner Reflector Lasers with Surface-Grating-Etching for Simple Mode Selectivity
- Grating Metal Structure with Low-$K$ Benzocyclobutene and Electroplated Copper for High-$Q$ Spiral Inductors
- Heterojunction Bipolar Phototransistor with Monolithic Integrated Microlens
- Novel High-Radiance Surface-Emitting Light Emitting Diode Structure with Circular 45° Corner Reflector and Microlens
- Monolithic Integration of InP-Based HEMT and MSM Photodiode Using InGaAsP ($\lambda=1.3$ μm) Buffer
- Open-Circuit Voltage Improvement in InGaAs/InP Heterojunction Solar Cells
- New Through-Wafer Via Interconnections with Thick Oxidized Porous Silicon Sidewall Via
- New Fabrication Technology for Integrating Field Effect Transistors and Diodes
- Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes
- Low-Loss and High-Frequency Interconnection Technology on Membrane Supported by Porous Silicon Post