Heterojunction Bipolar Phototransistor with Monolithic Integrated Microlens
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概要
- 論文の詳細を見る
In this paper, we present a monolithic integration of a microlens and an InP/InGaAs heterojunction bipolar phototransistor (HPT). Three types of HPTs were fabricated and their optical characteristics were investigated. The optical gain of the proposed HPT was improved 6-fold compared to the front type HPT. The HPT with a back-side microlens showed 0.61 A/W dc responsivity (PD mode) and that of an HPT without a lens showed 0.18 A/W (PD mode) at 1.55 μm illumination. Quantum efficiency was increased by 34.8%. The fiber alignment tolerance has also been improved. The HPT with a lens showed a 40 μm tolerance, while the HPT without a lens exhibited a 22-μm tolerance at 3 dB below the maximum values.
- 2006-08-15
著者
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Kwon Young-se
Department Of E.e. Kaist
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Kim Jaeho
Department Of Advanced Energy Graduate School Of Frontier Sciences The University Of Tokyo
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Kim Hoon
Department Of Agricultural Chemistry Sunchon National University
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Yang Hwa-Yong
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong Yusong-Gu, Daejon 305-701, Republic of Korea
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Cho Seok-Jin
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong Yusong-Gu, Daejon 305-701, Republic of Korea
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Kim Jaeho
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong Yusong-Gu, Daejon 305-701, Republic of Korea
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Kwon Young-Se
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusong-Dong Yusong-Gu, Daejon 305-701, Republic of Korea
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