Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

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概要

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• We investigated the resistance switching (RS) phenomenon in epitaxial NiO (epi-NiO) films by employing different types of top electrodes (TEs). Epi-NiO showed successive bipolar RS when Pt and CaRuO3 (CRO) were used as the TEs, but not when Al and Ti were used. We studied the temperature dependence of the current–voltage ($I$–$V$) characteristics for various TEs and resistance states to understand the conduction properties of TE/epi-NiO. Pristine CRO/epi-NiO showed metallic behavior, while pristine Pt/epi-NiO and Al/epi-NiO showed insulating behavior. Pt/epi-NiO and Al/epi-NiO, however, switched to a metallic or non-insulating state after electroforming. Transmission electron microscopy (TEM) images revealed the presence of a distinct stable interfacial AlOx layer in pristine Al/epi-NiO. On the other hand, the interfacial metal oxide layer was indistinguishable in the case of pristine Pt/epi-NiO and CRO/epi-NiO. Our experimental results suggested that epi-NiO has an oxygen defect on its surface and therefore the various TE/epi-NiO interfaces characterized in this study adopt distinctive electrical states. Further, the bipolar RS phenomenon can be explained by the voltage-polarity-dependent movement of oxygen ions near the interface.

• 2010-03-25

著者

• Lee Seung

  Department Of Anesthesiology And Pain Medicine Dong-a University Hospital

• Kim Hoon

  Department Of Agricultural Chemistry Sunchon National University

• Sunae Seo

  Samsung Advanced Institute of Technology, Giheung-gu, Yongin, Gyeonggi-do 449-712, Korea

• Sunae Seo

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea

• Jung Hoon

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea

• Hong Woo

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea

• Bak Jung

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea

• Yun Daniel

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea

• Kookrin Char

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea

• Deok-Hwang Kwon

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea

• Miyoung Kim

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea

• Dong-Chirl Kim

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea

• Xiang-Shu Li

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea

• Gyeong-Su Park

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea

• Ranju Jung

  Department of Electrophysics, Kwangwoon University, Seoul 139-701, Korea

• Hoon Min

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea

• Seung Ran

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea

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