Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The effect of Ru crystal orientation on the deposition behavior of chemical vapor deposition (CVD) Cu was investigated. The crystal orientation of Ru films was modulated by adjusting sputtering temperature. Ru(001) and random orientation films were obtained by sputtering at 300 °C and room temperature, respectively. CVD Cu on Ru with the (001) crystal orientation had a smooth morphology and a strong (111) peak. However, CVD Cu on the Ru film with the random orientation had a rough surface and a random orientation. A low lattice misfit between Cu(111) and Ru(001) realized a good morphology and a strong (111) orientation of CVD Cu films, which coincide with our lattice misfit concept.

• Japan Society of Applied Physicsの論文
• 2006-03-25

著者

• KIM Hoon

  Department of Agricultural Chemistry, Sunchon National University

• SATO Hiroshi

  Technology Development Center, Tokyo Electron Ltd.

• Kojima Yasuhiko

  Technology Development Center Tokyo Electron At Limited

• Shimogaki Yukihiro

  Department Of Materials Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo

• Yoshii Naoki

  Tokyo Electron Ltd. Yamanashi Jpn

• Yoshii Naoki

  Technology Development Center Tokyo Electron Ltd.

• Hosaka Shigetoshi

  Tokyo Electron Ltd. Yamanashi Jpn

• Hosaka Shigetoshi

  Technology Development Center Tokyo Electron Ltd.

• Kim Hoon

  Department Of Agricultural Chemistry Sunchon National University

• Sato Hiroshi

  Technology Development Center, Tokyo Electron AT Limited

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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