Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
スポンサーリンク
概要
著者
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Tajima Nobuo
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Nagano Shuji
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Tajima Nobuo
National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan
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Shimizu Hideharu
Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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