Nagano Shuji | Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
スポンサーリンク
概要
関連著者
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Nagano Shuji
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Tajima Nobuo
National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan
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Shimizu Hideharu
Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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HASAKA Satoshi
TAIYO NIPPON SANSO CORPORATION
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Nakahira Junya
Semiconductor Leading Edge Technologies Inc. (selete)
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Tajima Nobuo
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Kada Takeshi
Tri Chemical Laboratories Inc.
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Akifumi Gawase
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Gawase Akifumi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yoshi Ohashi
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Hideharu Shimizu
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Shinichi Chikaki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Noriaki Oda
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Seiichi Kondo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Satoshi Hasaka
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Shuichi Saito
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shuichi Saito
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shinichi Chikaki
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Noriaki Oda
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nagano Shuji
Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
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Shuji Nagano
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Junya Nakahira
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tajima Nobuo
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Kada Takeshi
Tri Chemical Laboratories Inc., Uenohara, Yamanashi 409-0112, Japan
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Hasaka Satoshi
Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
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Kobayashi Kiyoteru
Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
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Seiichi Kondo
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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Sakoda Kaoru
Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
著作論文
- Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
- High-Etching-Selectivity Barrier SiC ($k
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-$k$ Films