Kada Takeshi | Tri Chemical Laboratories Inc.
スポンサーリンク
概要
関連著者
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Kada Takeshi
Tri Chemical Laboratories Inc.
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
Tri Chemical Laboratories Inc.
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Ishikawa Masato
Tri Chemical Laboratories Inc.
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ishikawa Masato
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Tajima Nobuo
National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan
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Shimizu Hideharu
Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan
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Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Ogura Atsushi
Meiji University
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MACHIDA Hideaki
Tri Chemical Laboratory Inc.
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Kada Takeshi
Tri Chemical Laboratory Inc.
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Ogura A
Meiji University
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OHSHITA Yoshio
Toyota Technological Institute
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Ishikawa Masato
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara, Yamanashi 409-0112, Japan
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corp.
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Ogura Atsushi
Nec Corp. Microelectronics Research Laboratories
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Ogura Atsushi
Meiji Univ. Kawasaki Jpn
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Nagano Shuji
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Yoshi Ohashi
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Satoshi Hasaka
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Shuji Nagano
Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Nobuo Tajima
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Tajima Nobuo
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ogura Atsushi
Silicon Systems Research Labs, NEC Corporation, 1120 Shimokuzawa, Sagamihara-shi, Kanagawa 229-1198, Japan
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Ogura Atsushi
Silicon Systems Research Lab., NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ogura Atsushi
NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ishikawa Masato
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Ishikawa Masato
TRI Chemical Laboratory Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
Tri Chemical Laboratories Inc., Uenohara, Yamanashi 409-0112, Japan
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Kada Takeshi
TRI Chemical Laboratory Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Laboratory Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
著作論文
- Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
- Novel Precursor for Development of Si–C2H4–Si Networks in SiCH for Application as a Low-$k$ Cap Layer beyond 22 nm Nodes
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
- Ni Precursor for Chemical Vapor Deposition of NiSi
- Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique