Ogura Atsushi | Silicon Systems Research Laboratories Nec Corp.
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概要
関連著者
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corp.
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Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corporation
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Tajima Michio
Institute Of Space And Astronautical Scienc
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TAJIMA Michio
Institute of Space and Astronautical Science/JAXA
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Tajima Michio
Institute Of Space And Astronautical Science
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Miura Y
Ntt Lsi Laboratories
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IBUKA Shigeo
Institute of Space and Astronautical Science
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Kawano T
Osaka Univ. Osaka Jpn
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OGURA Atsushi
Institute of Molecular and Cellular Biosciences, The University of Tokyo
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Ogura A
Nec Corp. Sagamihara Jpn
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Ogura A
Nec Corp. Kanagawa Jpn
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Tokumaru Yozo
Faculty Of Science And Engineering Chuo University
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Kitano T
Fundamental Research Laboratories Nec Corporation
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Sumie Shingo
Kobelco Research Institute
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Miura Yoshinao
Silicon Systems Research Laboratories System Devices And Fundamental Research Nec Corporation
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Hamada K
Ulsi Device Development Laboratories Nec Corporation
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Hiroi Masayuki
Silicon Systems Research Laboratories Nec Corporation
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Kitano T
Ulsi Device Development Laboratories Nec Corporation
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HAMADA Kouichi
ULSI Device Development Laboratories, NEC Corporation
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Ogura A
Meiji University
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Machida Hideaki
Tri Chemical Laboratories Inc.
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TAKIGUCHI Jun-ichi
Institute of Space and Astronautical Science
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Kada Takeshi
Tri Chemical Laboratories Inc.
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Takiguchi Jun-ichi
Institute Of Space And Astronautical Science:faculty Of Science And Engineering Chuo University
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Ishikawa Masato
Tri Chemical Laboratories Inc.
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KARASAWA Tomoki
Keio University, Faculty of Science and Technology
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MIZOGUCHI Atsushi
School of Engineering, Tokai University
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Kimura Shigeru
Silicon Systems Research Laboratories Nec Corporation
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Karasawa Tomoki
Keio University Faculty Of Science And Technology
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Mizoguchi Atsushi
School Of Engineering Tokai University
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Li Zhiqiang
Institute Of Grassland Science China Agricultural University
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Tajima Michio
Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara 229-8510, Japan
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Hashizume Hidehisa
Kobelco Research Institute, 1-5-5 Takatsukadai, Nishi-ku, Kobe 651-2271, Japan
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Sumie Shingo
Kobelco Research Institute, 1-5-5 Takatsukadai, Nishi-ku, Kobe 651-2271, Japan
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OGURA Atsushi
Silicon Systems Research Laboratories, NEC Corporation
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Ogura Atsushi
Silicon Systems Research Labs, NEC Corporation, 1120 Shimokuzawa, Sagamihara-shi, Kanagawa 229-1198, Japan
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OGURA Atsushi
Silicon Systems Res. Labs., System Devices and Fundamental Res., NEC Corp.
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Li Zhiqiang
Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara 229-8510, Japan
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Ishikawa Masato
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Ishikawa Masato
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
著作論文
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Evaluation of SOI Substrates by Positron Annihilation
- Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
- Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
- Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
- Measurement of As and B Profiles Implanted into SOI Substrates
- Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
- Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions
- Ni Precursor for Chemical Vapor Deposition of NiSi