Measurement of As and B Profiles Implanted into SOI Substrates
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Hiroi Masayuki
Silicon Systems Research Laboratories Nec Corporation
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Ogura Atsushi
Silicon Systems Research Laboratories Nec Corp.
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Ogura Atsushi
Silicon System Research Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
関連論文
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Evaluation of SOI Substrates by Positron Annihilation
- Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen : Structure and Mechanical and Thermal Properties of Condensed Matter
- Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
- Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures
- Measurement of As and B Profiles Implanted into SOI Substrates
- Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
- Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions
- Ni Precursor for Chemical Vapor Deposition of NiSi
- Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique
- Evaluation of SOI Substrates by Positron Annihilation
- Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting