Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-$k$ Films with Plasma Damage Resistance

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概要

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• We propose new precursors for bulk low-$k$ films with plasma damage resistance. Our newly designed precursors contain long-chain hydrocarbon groups such as i-butyl and n-propyl groups. Using these precursors, we successfully produced films containing Si–CH2–Si groups by plasma-enhanced chemical vapor deposition (PECVD). The plasma damage resistance of these films under NH3 plasma treatment was studied. It was found that the increase in the $k$-value ($\Delta k$) is smaller in films with more Si–CH2–Si groups.

• 2010-05-25

著者

• Hideharu Shimizu

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Satoshi Hasaka

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Yoshi Ohashi

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Ohashi Yoshi

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Tajima Nobuo

  National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan

• Xu Yonghua

  Tri Chemical Laboratories Inc., Uenohara, Yamanashi 409-0112, Japan

• Takeshi Kada

  Tri Chemical Laboratories Inc., Uenohara, Yamanashi 409-0112, Japan

• Shuji Nagano

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Shuji Nagano

  Taiyo Nippon Sanso Corporation, 10 Okubo, Tsukuba, Ibaraki 300-2611, Japan

• Hideharu Shimizu

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

• Nobuo Tajima

  National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan

• Yonghua Xu

  Tri Chemical Laboratories Inc., Uenohara, Yamanashi 409-0112, Japan

• Satoshi Hasaka

  Taiyo-Nippon Sanso Corp., Tsukuba, Ibaraki 300-2611, Japan

関連論文

• Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
• Novel Precursor for Development of Si–C2H4–Si Networks in SiCH for Application as a Low-$k$ Cap Layer beyond 22 nm Nodes
• Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-$k$ Films with Plasma Damage Resistance
• High-Etching-Selectivity Barrier SiC ($k
• Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films

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