Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
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概要
- 論文の詳細を見る
We have studied impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP, induced by three different dielectric cap films, namely, SiO2, SiNx and SrF2. The difference in photoluminescence characteristics of these materials after heat treatment has been discussed. Furthermore, the in-plane spatial resolution of the disordering process has been investigated for the first time.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Coldren Larry
Optoelectronics Technology Center, University of California, Santa Barbara, CA 93106, USA
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Tada Kunio
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Mondry Mark
Optoelectronics Technology Center, University of California, Santa Barbara, CA 93106, USA
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Onishi Hirofumi
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Sudo Shinya
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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Tada Kunio
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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