Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
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概要
- 論文の詳細を見る
A GaAs/GaAlAs-system TE/TM mode splitter using the mode interference principle is described. Single- and double-mode waveguides are patterned by reactive ion etching after the first molecular beam epitaxy. They are then completely buried by liquid-phase epitaxy, which enables low loss propagation due to side-wall smoothness, because of the thermal deformation effect. For achieving low loss characteristics in this mode splitter, the surface treatment process before crystal growth and S-bend waveguide mask formation procedure are also optimized. Propagation loss of the single-mode waveguide is less than 1.0 dB/cm. In order to secure birefringence of the waveguide for mode splitting, upper and lower GaAlAs-cladding mol fractions are different. Finally, the fabricated device achieves the TE/TM mode splitting ratio of 8.2 dB for both polarizations.
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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NAKANO Yoshiaki
Department of Surgery, NTT West Osaka Hospital
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Okamoto Kazuya
Central Research Laboratory Nikon Corporation
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TADA Kunio
Department of Electronic Engineering, The University of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Nakano Y
Research Center For Advanced Science And Technology The University Of Tokyo
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DOI Masaaki
Central Research Center Nikon Corporation
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Doi Masaaki
Central Research Laboratory Nikon Corporation
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OKAMOTO Kimiharu
JEOL Limited
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Nakano Yoshiaki
Department Of Surgery Ntt West Osaka Hospital
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Okamoto K
Jeol Limited
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IRITA Takeshi
Central Research Laboratory, Nikon Corporation
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Irita T
Nikon Corp. Tokyo Jpn
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Nakano Yukie
Research Center for Advanced Science and Technology, The University of Tokyo
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Tada Kunio
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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