Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Furuta Mamoru
University Of Electro-communications
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Okamoto Kazuya
Central Research Laboratory Nikon Corporation
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山口 浩一
電気通信大学電子工学科
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OKAMOTO Kotaro
University of Electro-Communications
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YAMAGUCHI Ko-ichi
University of Electro-Communications
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OKAMOTO Kimiharu
JEOL Limited
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山口 浩一
電気通信大学電気通信学部電子工学科
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Okamoto K
Jeol Limited
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