Lateral Growth of GaAs over SiO2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition

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概要

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• Lateral growth of GaAs was carried out over SiO2 films on (111)B substrates by metalorganic chemical vapor deposition (MOCVD). A maximum growth rate of 0.29 $\mu$m/min was obtained at a direction having a 6° off-angle from $\langle 110\rangle$ to $\langle 112\rangle$A, and the ratio of lateral to vertical growth rate was 48.3. When the direction of lateral growth deviated toward the $\langle 112\rangle$B side, the growth rate drastically decreased and the crystal-orientation dependence of the lateral growth rate could be explained by the off-angle dependence of the stability of the Ga kink site. The (1$\bar{1}$0) facet appearing on the growth front of lateral layers extending in the [1$\bar{1}$0] direction was extremely flat and perpendicular to substrate surface.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-04-20

著者

• OKAMOTO Kotaro

  University of Electro-Communications

• YAMAGUCHI Ko-ichi

  University of Electro-Communications

• Okamoto Kotaro

  University of Electro-Communications, Chofu, Tokyo 182

関連論文

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• Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
• Spectral Shift of Photoluminescence of Highly Doped GaAs Epitaxial Layers Grown by MOCVD
• Profiling of Double-Crystal X-Ray Diffraction of InGaAs Epilayers Grown on GaAs
• Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganie Chemical Vapor Deposition Using Diethylgalliumchloride
• Lateral Growth of GaAs over SiO2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition

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