Spectral Shift of Photoluminescence of Highly Doped GaAs Epitaxial Layers Grown by MOCVD
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概要
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The photoluminescence spectra of Se-doped and Si-doped GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) were measured and compared. The spectral shift of Se-doped samples changes only with the carrier concentration, which can be explained by the Moss-Burstein shift, while that of Si-doped samples depends not only on the carrier concentration but also on growth rates and V/III mole fractions. It became apparent from X-ray diffraction that the lattice constant began to decrease in highly Si-doped layers and that the anomalous spectral shifts are caused by the lattice compression originating from a high density of [Si_<Ga>-Si_<As>] pairs incorporated in highly Si-doped layers.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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OKAMOTO Kotaro
University of Electro-Communications
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KURIHARA Nobuaki
University of Electro-Communications
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