Profiling of Double-Crystal X-Ray Diffraction of InGaAs Epilayers Grown on GaAs
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概要
- 論文の詳細を見る
In_<0.12>Ga_<0.88>As epilayers were grown by a direct growth (DG) process and a two step growth (TG) process and analyzed by measuring the profile of the diffraction angle and full width at half maximum (FWHM) of double-crystal X-ray diffraction (DXRD). In the case of the DG process, rectangular-shaped grains are surrounded by highly dislocated boundaries, which are observed as crosshatches. Profiles of DXRD indicate that both epilayer and substrate of as-grown samples contain a strain. In the case of TG process, both the region growing coherently and the region containing a high density of defects appear along the heterointerface and the latter acts as an absorber of misfitstrain. As a result, the epilayer is almost free from strain.
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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OKAMOTO Kotaro
University of Electro-Communications
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YAMAGUCHI Ko-ichi
University of Electro-Communications
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TOSAKA Hajime
University of Electro-Communications
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