Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganie Chemical Vapor Deposition Using Diethylgalliumchloride
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概要
- 論文の詳細を見る
Selective epitaxial growth of the step-flow mode is observed on (100) vicinal Gaps surfaces by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD) using diethylgalliumchloride (DEGaCl). The extremely flat surface obtained is identified as an exactly (100)-oriented plane and extends from one side of the mask edge (upstream edge of step flow) toward the downstream region of the step flow. The step-flow-mode growth was observed in a wide range of growth conditions, and it is suggested that the enhancement of the reevaporation of GaCl species suppresses two-deimensional nucleation on the terrace surfaces.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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OKAMOTO Kotaro
University of Electro-Communications
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YAMAGUCHI Ko-ichi
University of Electro-Communications
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Okamoto Kotaro
Univetsity Of Electro-communications
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Yamaguchi Ko-ichi
Univetsity Of Electro-communications
関連論文
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