Selective Epitaxial Growth of AlGaAs by Atmospheric Pressure : MOCVD Using Diethylgalliumchloride and Diethylaluminiumchloride
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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OKAMOTO Kotaro
University of Electro-Communications
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YAMAGUCHI Ko-ichi
University of Electro-Communications
関連論文
- Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Selective Epitaxial Growth of AlGaAs by Atmospheric Pressure : MOCVD Using Diethylgalliumchloride and Diethylaluminiumchloride
- Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
- Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
- Spectral Shift of Photoluminescence of Highly Doped GaAs Epitaxial Layers Grown by MOCVD
- Profiling of Double-Crystal X-Ray Diffraction of InGaAs Epilayers Grown on GaAs
- Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganie Chemical Vapor Deposition Using Diethylgalliumchloride
- Lateral Growth of GaAs over SiO2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition