Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition

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概要

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• By exposure to an atom beam, polycrystal deposition on mask films (W and SiO_2) was suppressed in the selective epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD) under atmospheric pressure. While surface migration was enhanced on W surfaces, reevaporation was enhanced on SiO_2 surfaces by atom beam irradiation. By optimizing growth conditions, selective epitaxial growth was realized without polycrystal deposition on stripe-shaped masks where the maximum width of the stripe was 40 μm for W masks and 150 μm for SiO_2 masks.

• 社団法人応用物理学会の論文
• 1989-09-20

著者

• OKAMOTO Kotaro

  University of Electro-Communications

• YAMAGUCHI Ko-ichi

  University of Electro-Communications

関連論文

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• Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Selective Epitaxial Growth of AlGaAs by Atmospheric Pressure : MOCVD Using Diethylgalliumchloride and Diethylaluminiumchloride
• Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
• Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
• Spectral Shift of Photoluminescence of Highly Doped GaAs Epitaxial Layers Grown by MOCVD
• Profiling of Double-Crystal X-Ray Diffraction of InGaAs Epilayers Grown on GaAs
• Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric Pressure-Metalorganie Chemical Vapor Deposition Using Diethylgalliumchloride
• Lateral Growth of GaAs over SiO2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition

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