Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Selective epitaxial growth of GaAs was carried out by atmospheric-pressure metalorganic chemical vapor deposition, and lateral supply mechanisms of reactant species from mask areas to window areas were investigated. Since reactant species arriving on SiO_2 surfaces were easily reevaporated, deviation from mass balance was observed. In the case of a SiO_2 mask with width of more than 20 μm, lateral vapor-phase diffusion dominated over increment of selective epilayers because of short surface-diffusion length on SiO_2 surfaces (<1μm). It was apparent experimentally and analytically that long ridged tails of selective epilayers were formed by lateral vapor-phase diffusion. Appearance of wavelike tails at mask edges was due to surface diffusion from (111)B facets. Surface-diffusion length on (111)B surfaces was estimated at 3 μm.

• 社団法人応用物理学会の論文
• 1993-04-15

著者

• Okamoto Kazuya

  Central Research Laboratory Nikon Corporation

• Okamoto Kotaro

  Department Of Electronics Engineering Shizuoka University

• Okamoto Kotaro

  Department Of Communication Engineering University Of Electro-communications

• OKAMOTO Kimiharu

  JEOL Limited

• Yamaguchi K

  Toshiba Corp. Yokohama Jpn

• Yamaguchi Ko-ichi

  Department Of Electronics Engineering Shizuoka University

• Yamaguchi Ko-ichi

  Department Of Electronic Engineering The University Of Electro-communications

• Okamoto K

  Jeol Limited

関連論文

• Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
• Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
• Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
• Image Conservation in Inelastically Scattered Electrons in Reflection Electron Microscopy
• Design features of a new ultra-high vacuum electron microscope with an omega filter
• Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
• Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition
• V/III Flux Ratio Dependence of InAs Epilayers Grown on GaAs Subsutrates by Molecular Beam Epitaxy
• InGaAs Epilayers of High In Composition Grown on GaAs Substrates by Molecular Beam Epitaxy
• Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
• Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
• Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
• Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
• Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition
• Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride
• MES-FETs Fabricated on Doped a-Si Films
• Metalorganic Chemical Vapor Deposition of GaAs on (111)B Substrates by Using Diethylgalliumchloride
• Necessary Conditions for Generating Intense Cluster Beam
• Ionization of Nitrogen Cluster Beam
• Influence of Pressure in Nozzle-Skimmer Region on Generation of Nitrogen Cluster Beam

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