Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition

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概要

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• Selective epitaxial growth of Si- and Zn-doped GaAs was carried out by atmospheric-pressure metalorganic chemical vapor deposition. The carrier concentration of the selective epilayers changed from that of the uniformly grown epilayers: decrease in Si-doping efficiency and increase in Zn-doping efficiency in selective epitaxial growth. The main cause for these phenomena is the lateral supply of AsH_3 from SiO_2-mask areas to GaAs-window areas, which is induced by the selective decomposition of AsH_3.

• 社団法人応用物理学会の論文
• 1992-10-01

著者

• Okamoto Kotaro

  Department Of Electronics Engineering Shizuoka University

• Okamoto Kotaro

  Department Of Communication Engineering University Of Electro-communications

• Yamaguchi Ko-ichi

  Department Of Electronics Engineering Shizuoka University

• Yamaguchi Ko-ichi

  Department Of Electronic Engineering The University Of Electro-communications

• KISHIDA Shigeki

  Department of Electronic Engineering, University of Electro-Communications

• OKAMOTO Kotaro

  Department of Electronic Engineering, University of Electro-Communications

関連論文

• Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
• Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition
• V/III Flux Ratio Dependence of InAs Epilayers Grown on GaAs Subsutrates by Molecular Beam Epitaxy
• InGaAs Epilayers of High In Composition Grown on GaAs Substrates by Molecular Beam Epitaxy
• Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition
• Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride
• MES-FETs Fabricated on Doped a-Si Films
• Metalorganic Chemical Vapor Deposition of GaAs on (111)B Substrates by Using Diethylgalliumchloride

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