MES-FETs Fabricated on Doped a-Si Films
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概要
- 論文の詳細を見る
P atoms are doped into a-Si films by varying the mole fraction of PH_3 to SiH_4 (M_<P/S>) while keeping the mole fraction of Ar to SiH_4 at 11. MES-FETs are fabricated on doped a-Si films and g_m=1.3・10^<-4>mS/mm is obtained for those fabricated on films deposited at M_<P/S>=1.5・10^<-3>. Effective mobility of 1.9 cm^2/V・s is obtained from transfer conductance and pinch-off voltage of MES-FETs, which is about one order higher than that obtained from MIS-FETs.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Okamoto Kotaro
Department Of Electronics Engineering Shizuoka University
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Okamoto Kotaro
Department Of Communication Engineering University Of Electro-communications
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Shimaya Katsuhisa
Department of Communication Engineering, University of Electro-Communications
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Shimaya Katsuhisa
Department Of Communication Engineering University Of Electro-communications
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