InGaAs Epilayers of High In Composition Grown on GaAs Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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SAKIYAMA Koji
Departments of Anatomy, Tokyo Dental College
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Sakiyama K
Sharp Corp. Hiroshima Jpn
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Sakiyama Koji
Department Of Anatomy Tokyo Dental College
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Okamoto Kotaro
Department Of Electronics Engineering Shizuoka University
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Okamoto Kotaro
Department Of Communication Engineering University Of Electro-communications
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HANANOKI Ryoji
Department of Electronic Engineering, University of Electro-Communications
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Sakiyama Keizo
Vlsi Development Laboratories Sharp Corporation
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Hananoki R
Department Of Electronic Engineering University Of Electro-communications
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Hananoki Ryoji
Department Of Electronic Engineering University Of Electro-communications
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Sakiyama Keizoh
Process Development Center Integrated Circuits Group Sharp Corporation
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