Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Films of SiO_2, W and W/SiO_2 have been applied as masks for the selective epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD). The deposition selectiveties on SiO_2 masks are mainly due to a difference in the absorption coefficients of reactant species between Sin. and GaAs, while those on W masks are due to the surface migration of reactant species. Reactant species migrating on the surfaces of W masks are (finally) used in the epitaxial growth of opening windows, and selective epitaxial growth maintaining mask surfaces completely free from deposition have been attained for samples in which mask patterns are narrower than 40μm.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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IMAI Tetsuji
Department of Electronics, Faculty of Engineering, Shizuoka Univerity
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Imai Tetsuji
Department Of Electronics Engineering Shizuoka University
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Okamoto Kotaro
Department Of Electronics Engineering Shizuoka University
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Okamoto Kotaro
Department Of Communication Engineering University Of Electro-communications
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Yamaguchi Ko-ichi
Department Of Electronics Engineering Shizuoka University
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Yamaguchi Ko-ichi
Department Of Electronic Engineering The University Of Electro-communications
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