Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride

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概要

• 論文の詳細を見る

• In selective metalorganic chemical vapor deposition, ridge growth of GaAs was investigated with respect to step-flow-mode growth using diethylgalliumchloride. Although the flat surface of selective epilayers was easy to obtain due to the reevaporation-enhancement effect, anisotropic ridged layers were also observed. The growth form of the ridged layers depended upon crystal orientation of striped mask patterns, off-angle of vicinal (100) substrates and step-flow velocity. Step-flow velocity in the [011] direction was 1.6 times higher than that in the [01^^-1] direction; as a result, long ridged layers were formed along the [011] direction.

• 社団法人応用物理学会の論文
• 1993-11-15

著者

• Okamoto Kotaro

  Department Of Electronics Engineering Shizuoka University

• Okamoto Kotaro

  Department Of Communication Engineering University Of Electro-communications

• Okamoto Kotaro

  Department Of Electronic Engineering University Of Electro-communications

• Yamaguchi Ko-ichi

  Department Of Electronics Engineering Shizuoka University

• Yamaguchi Ko-ichi

  Department Of Electronic Engineering The University Of Electro-communications

関連論文

• Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
• Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition
• V/III Flux Ratio Dependence of InAs Epilayers Grown on GaAs Subsutrates by Molecular Beam Epitaxy
• InGaAs Epilayers of High In Composition Grown on GaAs Substrates by Molecular Beam Epitaxy
• Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition
• Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride
• MES-FETs Fabricated on Doped a-Si Films
• Metalorganic Chemical Vapor Deposition of GaAs on (111)B Substrates by Using Diethylgalliumchloride

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