GaAs 微細加工層の STM 探針への応用
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概要
- 論文の詳細を見る
H_3P0_4溶液を用いたウェットエッチング法によりGaAsマイクロSTM探針を作製した。GaAs探針先端は4つの{150}ファセット面によって構成され、先端曲率半径は50nm以下の探針構造が得られた。GaAs探針の(NH_4)_2Sx溶液中への浸漬とアニール処理により、トンネルスペクトルの改善が確認された。GaAs探針を用いたグラファイト表面のSTM観察では、安定した原子分解能を得ることができた。
- 社団法人電子情報通信学会の論文
- 1995-10-20
著者
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山口 浩一
電気通信大学
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山口 浩一
電気通信大学電子工学科
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多田 哲
電気通信大学 電子工学科
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Yamaguchi Katsumi
Department Of Mechanical Engineering Nagoya University
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山口 浩一
電気通信大学電気通信学部電子工学科
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