LQE2000-16 自己組織化InAs量子ドットの高均一化 : ドットサイズの自己制限効果
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概要
- 論文の詳細を見る
Straski-Krastanov成長モードの自己組織化InAs量子ドットの作製において, InAs成長量に依存しないドットサイズの自己制限効果が観察され, フォトルミネッセンス(PL)半値幅21.3meVの高均一なドットサイズ分布を達成した.この自己制限機構としては, 安定なファセット面の形成によるものと考察された.PL強度の温度依存性より, 異なるサイズを有するInAs量子ドット間で電子の熱的放出と取り込み過程が起こり, 見かけ上PL半値幅に温度依存性が見られないことを示した.低As圧成長では, コヒーレントドットの自己制限サイズが大きくなり, またコアレッセンス化が抑制されることが分かった.
- 社団法人電子情報通信学会の論文
- 2000-06-14
著者
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山口 浩一
Department Of Electronic Engineering
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山口 浩一
電気通信大学
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山口 浩一
電気通信大学電子工学科
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海津 利行
電気通信大学電子工学科
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祐乗坊 邦彦
電気通信大学電子工学科
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YAMAGUCHI Katsumi
Japan Space Utilization Promotion Center
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Yamaguchi Kiyoshi
Faculty Of Engineering Osaka Institute Of Technology
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Yamaguchi Katsumi
Department Of Mechanical Engineering Nagoya University
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Yuki Kazue
Otorhinolaryngology Nara Medical University
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山口 浩一
電気通信大学電気通信学部電子工学科
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YAMAGUCHI Kazufumi
Wireless Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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Yamaguchi Kazuhiko
Institute For Laser Science University Of Electro-communications
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