円偏光励起GaAsマイクロ探針のスピン偏極トンネル電子源への応用
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概要
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異方性ウェットエッチング及びS終端化処理によりGaAsマイクロ探針を作製し, スピン偏極トンネル電子源への応用について検討した.Ni薄膜試料を用いたスピン偏極STM実験では, GaAsマイクロ探針に照射した円偏光の旋回方向によるトンネル電流差(スピン偏極トンネル信号)を観測し, 更に磁気Kerr効果測定によるヒステリシス特性と同様の観測結果を得た.GaAsマイクロ探針表面の表面準位によって, 探針中の電子寿命が短くなることを時間分解フォトルミネセンス測定によって確認した.また, 表面準位を介したトンネリングによってスピン偏極トンネル信号に影響を与えることがわかった.
- 社団法人電子情報通信学会の論文
- 2000-09-25
著者
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山口 浩一
電通大
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山口 浩一
Department Of Electronic Engineering
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篠原 亮一
電気通信大学
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山口 浩一
電気通信大学
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山口 浩一
電気通信大学電子工学科
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YAMAGUCHI Katsumi
Japan Space Utilization Promotion Center
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Yamaguchi Kiyoshi
Faculty Of Engineering Osaka Institute Of Technology
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Yamaguchi Katsumi
Department Of Mechanical Engineering Nagoya University
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篠原 亮一
電気通信大学電子工学科
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Yuki Kazue
Otorhinolaryngology Nara Medical University
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山口 浩一
電気通信大学電気通信学部電子工学科
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YAMAGUCHI Kazufumi
Wireless Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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Yamaguchi Kazuhiko
Institute For Laser Science University Of Electro-communications
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