Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-30
著者
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山口 浩一
電通大
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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KAIZU Toshiyuki
Department of Electronic Engineering, University of Electro-Communications
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- 結晶工学
- 結晶工学
- 高均一量子ドットの自己形成
- Control of GaSb/GaAs Quantum Nanostructures by Molecular Beam Epitaxy