Development of Metal-Organic Vapor Phase Diffusion Enhanced Selective Area Epitaxy, a Novel Metal-Organic Vapor Phase Epitaxy Selective Area Growth Technique, and Its Application to Multi-Mode Interference Device Fabrication
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概要
- 論文の詳細を見る
For the first time Multi-Mode Interference (MMI) power splitters have been fabricated directly by selective area growth, using a novel metal-organic vapor phase diffusion enhanced selective area epitaxy (MOVE2) process. The MOVE2 process features extremely wide-range in-plane bandgap control, high design flexibility and good uniformity under conventional growth pressure and therefore is very suitable for photonic integration. For bulk InGaAs material in-plane bandgap shifts as large as 200 nm have been obtained. The general incorporation characteristics of both group-III and group-V species in selective area grown InGaAsP have also been determined. The MMI power splitter excess losses were as low as 2 dB, including S-bend losses.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Nakano Yoshiaki
Department Of Surgery Ntt West Osaka Hospital
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Bouda Martin
Department Of Electronic Engineering University Of Tokyo:(present Address)fujitsu Laboratories Ltd.
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Nakano Yoshiaki
Department Of Electrical Engineering The University Of Tokyo
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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