Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C

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概要

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• High quality AlN layer could be grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) by pulse injection (PI) method in which trimethylaluminium (TMAl) and NH3 are alternately supplied. Crystal quality of AlN layer grown by PI method (PI-AlN) was comparable with AlN layer grown by conventional MOVPE with continuous sources flow sequence (continuous-AlN, C-AlN) at 1240 °C showing similar (0002) symmetric and $(10\bar{1}2)$ skew symmetric full width at half maximum (FWHM) values by high resolution X-ray diffraction (HRXRD). Especially, it is noticeable that best crystal quality was observed when the growth rate was controlled to 1 monolayer/cycle. Moreover, PI method was proved to be effective in improving surface roughness of AlN layer. The root-mean-square (RMS) roughness of PI-AlN layer was 0.9 nm, which is three times smaller than C-AlN layer grown at same temperature with PI-AlN layer.

• Japan Society of Applied Physicsの論文
• 2007-10-25

著者

• Yang Jung-seung

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Waki Ichitaro

  Department Of Applied Chemistry The University Of Tokyo

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Sodabanlu Hassanet

  Department Of Electrical Engineering And Information System School Of Engineering The University Of

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Waki Ichitaro

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Shimogaki Yukihiro

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Yang Jung-Seung

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Sugiyama Masakazu

  Department of Electronic Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Sodabanlu Hassanet

  Department of Electronic Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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