Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
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概要
- 論文の詳細を見る
We propose a mechanism for the generation of polycrystals on masks in selective-area metalorganic vapor phase epitaxy. Polycrystals are generated when the gas-phase concentration of a film precursor just above a mask exceeds a critical value. The polycrystals of GaAs were observed at the center of 2-mm-wide SiO2 masks at 100 mbar total pressure, but they disappeared with the reduction of the total pressure to 50 mbar. The observed effect of total pressure and mask width on the generation of polycrystals was consistent with the concentration of a film precursor just above the mask which was estimated by numerically solving the gas-phase diffusion equation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-01
著者
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Oh Ho-jin
Department Of Materials Engineering School Of Engineering University Of Tokyo
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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Shimogaki Yukihiro
Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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