Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-10-01
著者
-
NAKANO Yoshiaki
Research Center for Advanced Science and Technology, The University of Tokyo
-
SHIMOGAKI Yukihiro
Department of Materials Engineering, The University of Tokyo
-
Oh H‐j
Department Of Materials Engineering School Of Engineering University Of Tokyo
-
OH Ho-jin
Department of Materials Engineering, School of Engineering, University of Tokyo
-
SUGIYAMA Masakazu
Department of Electronic Engineering, School of Engineering, University of Tokyo
-
Oh Ho-jin
Department Of Materials Engineering School Of Engineering University Of Tokyo
-
Sugiyama M
Department Of Electric Engineering And Information Systems School Of Engineering The University Of T
関連論文
- Measurement of Secondary Electron Emission Coefficient (γ) of MgO Protective Layer with Various Crystallinities
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- Effect of Partial Pressure of TiCl_4 and NH_3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
- Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
- Structural Changes in Ba(Sr_Ta_)O_3-Type Perovskite Compounds upon Tilting of Oxygen Octahedra
- Anomaly in the Infrared Active Phonon Modes and Its Relationship to the Dielectric Constant of (Ba_Sr_x)(Mg_Ta_)O_3 Compound
- GaN-Based High-Speed Intersubband Optical Switches
- Diffiraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol-Gel Silica Film by Laser Irradiation
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- GaN selective area metal-organic vapor phase epitaxy: prediction of growth rate enhancement by vapor phase diffusion model
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Microscopic Approach to Shock Waves in Crystal Solids. I
- Statistical-Mechanical Study of Ultrasonic Waves in a Crystal Lattice
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- Highly-Permissible Alignment Tolerance of Back-Illuminated Photo-Diode Array Attached with a Self-Aligned Micro Ball Lens
- Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
- Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
- Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
- Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
- Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl_4 and NH_3 by Introducing Ar Purge Time
- Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
- Microstructure of a Superconducting Compound La-Sr-Cu-O at Liquid Helium Temperature
- Phase Transformation in the Superconductor Ba-Y-Cu-O and La-Sr-Cu-O Compounds
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE(Lasers, Quantum Electronics)
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis