Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• NAKANO Yoshiaki

  Research Center for Advanced Science and Technology, The University of Tokyo

• SHIMOGAKI Yukihiro

  Department of Materials Engineering, The University of Tokyo

• Oh H‐j

  Department Of Materials Engineering School Of Engineering University Of Tokyo

• OH Ho-jin

  Department of Materials Engineering, School of Engineering, University of Tokyo

• SUGIYAMA Masakazu

  Department of Electronic Engineering, School of Engineering, University of Tokyo

• Oh Ho-jin

  Department Of Materials Engineering School Of Engineering University Of Tokyo

• Sugiyama M

  Department Of Electric Engineering And Information Systems School Of Engineering The University Of T

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