GaN-Based High-Speed Intersubband Optical Switches

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• NAKANO Yoshiaki

  Research Center for Advanced Science and Technology, The University of Tokyo

• SUGIYAMA Masakazu

  Department of Electronic Engineering, School of Engineering, University of Tokyo

• Suzuki Nobuhiro

  The Faculty Of Engineering Tokyo Institute Of Technology

• Nakano Yoshiaki

  Research Center For Advanced Science And Technology The University Of Tokyo

• Nakano Yoshiaki

  Research Center For Advanced Science And Technology Univ. Of Tokyo

• Nakano Yoshiaki

  Graduate School Of Engineering The University Of Tokyo

• Sugiyama Masaaki

  R & D Laboratories-i Central R & D Bureau Nippon Steel Cotporation

• Kumtornkittikul Chaiyasit

  Research Center For Advanced Science And Technology Univ. Of Tokyo

• Iizuka Norio

  Toshiba Research and Development Center

• Sugiyama M

  Department Of Electric Engineering And Information Systems School Of Engineering The University Of T

• Kaneko Kenji

  Corporate Research & Development Center Toshiba Corporation

• Kaneko Kei

  Corporate Research And Development Center Toshiba Corporation

• Sugiyama Munehiro

  Ntt Interdisciplinary Research Laboratories

• Iizuka Norio

  Corporate Research & Development Center Toshiba Corporation

• Suzuki N

  Corporate Research & Development Center Toshiba Corporation

• Nakano Y

  Research Center For Advanced Science And Technology The University Of Tokyo

• SUZUKI Nobuo

  Corporate Research & Development Center, Toshiba Corporation

• SHIMIZU Toshimasa

  Research Center for Advanced Science and Technology, Univ. of Tokyo

• Suzuki N

  Hitachi Ltd. Tokyo Jpn

• Kaneko Kei

  Corporate Research & Development Center Toshiba Corporation

• Sugiyama M

  Institute Of Engineering Innovation School Of Engineering The University Of Tokyo

• Shimizu Toshimasa

  Research Center For Advanced Science And Technology Univ. Of Tokyo

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Nakano Yoshiaki

  Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Suzuki Nobuo

  Corporate R&d Center Toshiba Corp.

• Nakano Yukie

  Research Center for Advanced Science and Technology, The University of Tokyo

関連論文

• Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
• Properties of Disk Resonators and End-Coupled Disk Filters with Superconducting Films
• Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
• Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
• Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
• Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
• Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
• Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
• Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
• Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
• Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
• Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
• Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
• Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
• Different Characteristics of Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
• Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
• Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
• Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
• Structural Changes in Ba(Sr_Ta_)O_3-Type Perovskite Compounds upon Tilting of Oxygen Octahedra
• Anomaly in the Infrared Active Phonon Modes and Its Relationship to the Dielectric Constant of (Ba_Sr_x)(Mg_Ta_)O_3 Compound
• High F_ltmaxgt AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au base contacts for DC to 40 GHz Broadband Amplifiers
• Highly Reproducible Fabrication Technology for Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Pt/Ti/Pt/Au Base Electrodes
• Changes in Collector and Base Currents for AlGaAs/GaAs Heterojunction Bipolar Transistors
• Ultra-Low Resistance Base Ohmic Contact with Pt/Ti/Pt/Au for High-f_ AlGaAs/GaAs Heterojunction Bipolar Tramsistors
• GaN-Based High-Speed Intersubband Optical Switches
• Simulation of Ultrafast GaN/AlN Intersubband Optical Switches(Optical Signal-Processing Devices for Photonic Networks)
• Simulation of Ultrafast Intersubband Optical Modulation Achieved in GaN/AlN Ridge Waveguide
• Study on the Conduction Mechanism of Organic Light-Emitting Diode Using One-Dimensional Discontinuous Model(Special Issue on Recent Progress in Organic Molecular Electronics)
• Analysis of Electoluminescence Mechanisms in N, N'-disphenyl-N, N'-bis(3-methylphenyl)-1, 1'-disphenyl-4, 4'-diamine/Hydroxyquinoline Aluminum Bilayer Organic Light-Emitting Diode by Bipolar Hopping Conduction(Atoms, Molecules, and Chemical Physics)
• FDTD Simulation of Femtosecond Optical Gating in Nonlinear Optical Waveguide Utilizing Intersubband Transition in AlGaN/GaN Quantum Wells(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• Partial Product Generator with Embedded Booth-Encoding
• Annealing Effects on (NH_4)_2S_x-Treated GaAs(001) and InP(001) Surfaces
• Unrepeatered 40 Gbit/s-WDM Transmission Employing A_ Managed Raman Amplification and CS-RZ Modulation(Special Issue on 40 Gbit/s Optical Transmission Technologies)
• Diffiraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol-Gel Silica Film by Laser Irradiation
• A Study on Key Technologies to Realize Magneto-Optical Storage of Over 7 GBytes in CD Sized Disk
• Key Technologies to Realize Magneto-Optical Storage of Over 7 Gbytes in CD-Sized Disk
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
• Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
• GaN selective area metal-organic vapor phase epitaxy: prediction of growth rate enhancement by vapor phase diffusion model
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Effect of Y-Doping on Resistance Degradation of Multilayer Ceramic Capacitors with Ni Electrodes under the Highly Accelerated Life Test
• Aging Behavior of Ni-Electrode Multilayer Ceramic Capacitors with X7R Characteristics
• Microscopic Approach to Shock Waves in Crystal Solids. I
• Statistical-Mechanical Study of Ultrasonic Waves in a Crystal Lattice
• Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
• High-Rate Deposition of High-Quality Silicon Nitride Film at Room Temperature by Quasi-Remote Plasma Chemical Vapor Deposition
• Highly-Permissible Alignment Tolerance of Back-Illuminated Photo-Diode Array Attached with a Self-Aligned Micro Ball Lens
• Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
• Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
• Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
• Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
• Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
• Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
• InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
• Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
• Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
• Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
• Pyrolysis and Photolysis of Trimethylaluminum
• Wireless Tag System Using an Infrared Beam and an Electromagnetic Wave for Outdoor Facilities
• A New Personal Multi-Functional Card and Related Communication Equipment for an Automatic Call Forwarding Service
• Properties of Thin-Film Thermal Switches for High-T_c Superconductive Filter (Special Section on Superconducting Devices)
• High T_c Superconductor Joint with Low Loss and High Strength (Special Section on Superconducting Devices)
• 1.5-GHz Band-Pass Microstrip Filters Fabricated Using EuBaCuO Superconducting Films
• Reflection High-Energy Electron Diffraction Oscillation during CaF_2 Growth on Si(111) by Partially Ionized Beam Epitaxy
• Novel Superconductive Delay Line Process Using High-T_c Superconducting Films
• Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
• Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
• Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
• Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
• Microstructure of a Superconducting Compound La-Sr-Cu-O at Liquid Helium Temperature
• Phase Transformation in the Superconductor Ba-Y-Cu-O and La-Sr-Cu-O Compounds
• Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
• Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
• Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
• Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE(Lasers, Quantum Electronics)
• Effects of Strain on Highly Mismatched AlGaN/GaN Multiple Quantum Wells
• Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
• Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
• Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_Ga_N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
• Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
• Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
• Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
• Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
• Design and Simulation of InP1×N Planar Optical Switch Based on Ream Deflection
• Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• All-Optical Flip-Flop Based on Coupled-Mode DBR Laser Diode for Optically Clocked Operation
• Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow
• AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
• Fabrication of Semiconductor Laser for Integration with Optical Isolator
• Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition

もっと見る 閉じる

スポンサーリンク