Iizuka Norio | Toshiba Research and Development Center
スポンサーリンク
概要
関連著者
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Iizuka Norio
Toshiba Research and Development Center
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Sugiyama Takatoshi
Wireless Labortories Ntt Docomo Inc.
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Suzuki Nobuhiro
The Faculty Of Engineering Tokyo Institute Of Technology
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Obara M
Laser Science Group The Institute Of Physical And Chemical Research (riken):(present Address)departm
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Sugiyama Tohru
Toshiba Research and Development Center
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Obara Masao
Toshiba Research and Development Center
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Sugiyama T
Wireless Labortories Ntt Docomo Inc.
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Kaneko Kenji
Corporate Research & Development Center Toshiba Corporation
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Obara Masao
Toshiba R & D Center
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Suzuki N
Corporate Research & Development Center Toshiba Corporation
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Suzuki N
Hitachi Ltd. Tokyo Jpn
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Kaneko Kei
Corporate Research & Development Center Toshiba Corporation
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Sugiyama Tsunetoshi
Department Of Applied Physics Tokyo University Of Agriculture And Technology:(present Address) Depar
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Kuriyama Yasuhiko
Toshiba Research and Development Center
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Kaneko Kei
Corporate Research And Development Center Toshiba Corporation
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Iizuka Norio
Corporate Research & Development Center Toshiba Corporation
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SUZUKI Nobuo
Corporate Research & Development Center, Toshiba Corporation
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Kuriyama Y
Toshiba Corp. Kawasaki‐shi Jpn
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Suzuki Nobuo
Corporate R&d Center Toshiba Corp.
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NAKANO Yoshiaki
Research Center for Advanced Science and Technology, The University of Tokyo
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SUGIYAMA Masakazu
Department of Electronic Engineering, School of Engineering, University of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Nakano Yoshiaki
Graduate School Of Engineering The University Of Tokyo
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Sugiyama Masaaki
R & D Laboratories-i Central R & D Bureau Nippon Steel Cotporation
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Kumtornkittikul Chaiyasit
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Tsuda Kunio
Toshiba Research and Development Center
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Morizuka Kouhei
Toshiba Research and Development Center
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Hongo Sadato
Toshiba Research and Development Center
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ASAKA Masayuki
Toshiba Research and Development Center
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KOBAYASHI Torakichi
Toshiba Research and Development Center
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Sugiyama M
Department Of Electric Engineering And Information Systems School Of Engineering The University Of T
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Tsuda K
Matsushita Electric Industrial Co. Ltd. Moriguchi‐shi Jpn
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Sugiyama Munehiro
Ntt Interdisciplinary Research Laboratories
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Nakano Y
Research Center For Advanced Science And Technology The University Of Tokyo
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SHIMIZU Toshimasa
Research Center for Advanced Science and Technology, Univ. of Tokyo
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SUZUKI Nobuo
The authors are with the Corporate Research & Development Center, Toshiba Corp.
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IIZUKA Norio
The authors are with the Corporate Research & Development Center, Toshiba Corp.
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KANEKO Kei
The authors are with the Corporate Research & Development Center, Toshiba Corp.
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Morizuka K
Toshiba Research And Development Center
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Sugiyama M
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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Shimizu Toshimasa
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Nakano Yukie
Research Center for Advanced Science and Technology, The University of Tokyo
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Tsuda Kunio
Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
著作論文
- High F_ltmaxgt AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au base contacts for DC to 40 GHz Broadband Amplifiers
- Highly Reproducible Fabrication Technology for Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Pt/Ti/Pt/Au Base Electrodes
- Changes in Collector and Base Currents for AlGaAs/GaAs Heterojunction Bipolar Transistors
- Ultra-Low Resistance Base Ohmic Contact with Pt/Ti/Pt/Au for High-f_ AlGaAs/GaAs Heterojunction Bipolar Tramsistors
- GaN-Based High-Speed Intersubband Optical Switches
- Simulation of Ultrafast GaN/AlN Intersubband Optical Switches(Optical Signal-Processing Devices for Photonic Networks)
- Simulation of Ultrafast Intersubband Optical Modulation Achieved in GaN/AlN Ridge Waveguide
- FDTD Simulation of Femtosecond Optical Gating in Nonlinear Optical Waveguide Utilizing Intersubband Transition in AlGaN/GaN Quantum Wells(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)