Kaneko Kei | Corporate Research & Development Center Toshiba Corporation

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著作論文

Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer
GaN-Based High-Speed Intersubband Optical Switches
Simulation of Ultrafast GaN/AlN Intersubband Optical Switches(Optical Signal-Processing Devices for Photonic Networks)
Simulation of Ultrafast Intersubband Optical Modulation Achieved in GaN/AlN Ridge Waveguide
Study on the Conduction Mechanism of Organic Light-Emitting Diode Using One-Dimensional Discontinuous Model(Special Issue on Recent Progress in Organic Molecular Electronics)
Analysis of Electoluminescence Mechanisms in N, N'-disphenyl-N, N'-bis(3-methylphenyl)-1, 1'-disphenyl-4, 4'-diamine/Hydroxyquinoline Aluminum Bilayer Organic Light-Emitting Diode by Bipolar Hopping Conduction(Atoms, Molecules, and Chemical Physics)
FDTD Simulation of Femtosecond Optical Gating in Nonlinear Optical Waveguide Utilizing Intersubband Transition in AlGaN/GaN Quantum Wells(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_Ga_N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures

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