Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_<0.4>Ga_<0.6>N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
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概要
- 論文の詳細を見る
Lattice mismatch effects on AlN and GaN growth were studied, aiming at the realization of multiple-quantum-well (MQW) structures. Lattice-relaxed AlN, GaN and Al_<0.4>Ga_<0.6>N were prepared as buffer layers. Microcrystal islands were observed for AlN and GaN respectively grown on the GaN and AlN buffer layers, due to lattice mismatch. However, two-dimensional growth was observed for both layers on the Al_<0.4>Ga_<0.6>N buffer layer. This growth-mode change was ascribable to the fact that a lateral lattice constant for the Al_<0.4>Ga_<0.6>N surface, with residual in-plane compression, is almost the center between those of AlN and GaN. For the MQW structures grown on Al_<0.4>Ga_<0.6>N, it was thought that the AlN and GaN grew two-dimensionally and coherently without significant dislocation generation.
- 社団法人応用物理学会の論文
- 2001-12-01
著者
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Ohba Yasuo
Corporate Research And Development Center Toshiba Corporation
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Kaneko Kei
Corporate Research And Development Center Toshiba Corporation
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SATO Rie
Corporate Research & Development Center, Toshiba Corporation
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Kaneko Kei
Corporate Research & Development Center Toshiba Corporation
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Sato Rie
Corporate Research And Development Center Toshiba Corporation
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