Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer

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概要

• 論文の詳細を見る
• 2008-10-25

著者

• Ohba Yasuo

  Corporate Research And Development Center Toshiba Corporation

• Kaneko Kei

  Corporate Research & Development Center Toshiba Corporation

• KUSHIBE Mitsuhiro

  Corporate Research and Development Center, Toshiba Corporation

• KATSUNO Hiroshi

  Corporate Research and Development Center, Toshiba Corporation

関連論文

• Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer
• GaN-Based High-Speed Intersubband Optical Switches
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• Simulation of Ultrafast Intersubband Optical Modulation Achieved in GaN/AlN Ridge Waveguide
• Study on the Conduction Mechanism of Organic Light-Emitting Diode Using One-Dimensional Discontinuous Model(Special Issue on Recent Progress in Organic Molecular Electronics)
• Analysis of Electoluminescence Mechanisms in N, N'-disphenyl-N, N'-bis(3-methylphenyl)-1, 1'-disphenyl-4, 4'-diamine/Hydroxyquinoline Aluminum Bilayer Organic Light-Emitting Diode by Bipolar Hopping Conduction(Atoms, Molecules, and Chemical Physics)
• FDTD Simulation of Femtosecond Optical Gating in Nonlinear Optical Waveguide Utilizing Intersubband Transition in AlGaN/GaN Quantum Wells(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer
• Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_Ga_N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
• Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers : Semiconductors

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