Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer

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概要

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• Room-temperature continuous-wave (cw) laser operation has been demonstrated for the first time for the test devices fabricated on sapphire substrates by metalorganic chemical vapor deposition using a high-temperature-grown single-crystal AlN (HT-AlN) buffer. The device structure was the ridge-stripe type with a 1.5-μm-wide and 750-μm-long cavity without facet coating. The threshold current, operating voltage, and wavelength at 20°C were 102 mA, 5.37 V, and 403 nm, respectively. It was expected that the device performance would be significantly improved by refining the layer structure, adding to adoption of the facet coating. These findings support the promising potential of the HT-AlN buffer technique for production of advanced short wavelength light emitting devices on sapphire substrates.

• 2006-01-15

著者

• Ohba Yasuo

  Corporate Research And Development Center Toshiba Corporation

• Iida Susumu

  Corporate Research And Development Center Toshiba Corporation

• Nunoue Sinya

  Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan

関連論文

• Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer
• Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer
• Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_Ga_N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
• Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers : Semiconductors

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