Simulation of Ultrafast GaN/AlN Intersubband Optical Switches(<Special Section>Optical Signal-Processing Devices for Photonic Networks)

概要

論文の詳細を見る
A one-dimensional finite-difference time-domain (FDTD) simulator for ultrafast optical switches based on intersubband transition (ISBT) in GaN/AlN waveguide is described. Influences of the inhomogeneous broadening and the 2D mode profile have been taken into consideration. The ultrafast optical response (τ∿185fs) measured in a GaN/AlN waveguide was successfully reproduced by the simulator. At present, however, the saturation characteristics of the fabricated device are mainly limited by the excess TM loss caused by the dislocation in MBE-grown nitride layers. When the dislocation density is reduced and the structure is optimized, the switching pulse energy will be improved to about 10pJ. Further reduction (∿1pJ) will be possible when low-loss submicron waveguides with spot-size converters are developed.
社団法人電子情報通信学会の論文
2005-03-01