AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
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概要
- 論文の詳細を見る
We report the first successful realization of an AlN-waveguide-based intersubband transition device prepared using both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) techniques to grow AlN-cladding GaN/AlN quantum wells. An intersubband absorption wavelength of as short as 1.3 μm is confirmed with a new measurement method using an ultrawide-spectrum light source. With this method, the intersubband absorption spectra of an AlN high-mesa waveguide can be directly observed for the first time. The intersubband absorption saturation measurements also show a good device characteristic with a saturation of 7 dB for a transverse magnetic (TM) polarized input pulse energy of 200 pJ.
- Japan Society of Applied Physicsの論文
- 2007-04-25
著者
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Kumtornkittikul Chaiyasit
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Iizuka Norio
Corporate Research & Development Center Toshiba Corporation
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Shimizu Toshimasa
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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Suzuki Nobuo
Corporate R&d Center Toshiba Corp.
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Iizuka Norio
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Shimizu Toshimasa
Research Center for Advanced Science and Technology, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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Kumtornkittikul Chaiyasit
Research Center for Advanced Science and Technology, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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