Effects of Strain on Highly Mismatched AlGaN/GaN Multiple Quantum Wells

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概要

• 論文の詳細を見る

• Photoluminescence(PL)spectra, surface morphologies and cross-sectional images of transmission microscopy(TEM)were examined after changing the thickness of barriers or wells in AlGaN/GaN multiple quantum wells. When the wells are thin and the barriers are thick, multi quantum wells(MQWs)are partially relaxed. This brings about changes in the electric field and the band-gap of the wells. Thus, the PL spectrum becomes broad. Although few cracks were observed, cross-sectional TEM images indicated that the crystalline quality was poor. Even when the wells are thin, however, the strain energy can be lowered by reducing the barrier thickness. Thus, an improved PL spectrum can be obtained.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• Iizuka Norio

  Corporate Research & Development Center Toshiba Corporation

• SUZUKI Nobuo

  Corporate Research & Development Center, Toshiba Corporation

• Suzuki Nobuo

  Corporate R&d Center Toshiba Corp.

関連論文

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• Simulation of Ultrafast Intersubband Optical Modulation Achieved in GaN/AlN Ridge Waveguide
• Effects of Strain on Highly Mismatched AlGaN/GaN Multiple Quantum Wells
• Simulation of Simultaneous Multi-Wavelength Conversion in GaN/AIN Intersubband Optical Amplifiers(Ultrafast Photonics)
• AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
• Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition

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