Different Characteristics of Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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概要
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The transistor action with negative differential resistance (NDR) of a nanometer-thick metal (CoSi_2)/insulator (CaF_2) resonant tunneling transistor is discussed for two transistor structures. These transistors are composed of metal-insulator (M-I) heterostructures with two metallic (CoSi_2) quantum wells and three insulator (CaF_2) barriers grown on an n-Si (111) substrate. One of the two structures has the base terminal connected to one of the quantum wells next to the collector, and the other, to one next to the emitter. Although base resistance is high maybe due to the damage caused during the fabrication process, the two transistors show different characteristics, as expected theoretically. Transfer efficiency α (=I_C/I_E) close to unity was obtained at 77K for electrons through the resonant levels in M-I heterostructures.
- 社団法人電子情報通信学会の論文
- 1994-09-25
著者
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Kohno Yoshifumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Suemasu Takashi
the Faculty of Engineering, Tokyo Institute of Technology
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Kohno Yoshifumi
the Faculty of Engineering, Tokyo Institute of Technology
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Suzuki Nobuhiro
the Faculty of Engineering, Tokyo Institute of Technology
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Watanabe Masahiro
the Faculty of Engineering, Tokyo Institute of Technology
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Asada Masahiro
the Faculty of Engineering, Tokyo Institute of Technology
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Suzuki Nobuhiro
The Faculty Of Engineering Tokyo Institute Of Technology
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Suzuki N
Corporate Research & Development Center Toshiba Corporation
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Suzuki N
Hitachi Ltd. Tokyo Jpn
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