High F_ltmaxgt AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au base contacts for DC to 40 GHz Broadband Amplifiers

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概要

• 論文の詳細を見る

• A low contact resistivity of 4.4×10^lt-7gt Ωcm^2 for AlGaAs/GaAs HBTs was realized using Pt/Ti/Pt/Au base metal and a 8×10^lt19gt cm^lt-3gt highly-doped base. A high f_ltmaxgt of 170 GHz was achieved by reducing a base resistance. The formation of oxide-free interface between an AlGaAs graded base and Pt-based metal was demonstrated with Auger electron spectroscopy. The optimization of the growth condition conquered the rapid current-induced degradation in the highly Be-doped HBTs. An extremely wide bandwidth of 40 GHz was attained by a Darlington feedback amplifier fabricated using these high-f_ltmaxgt HBTs. These properties indicate that the application of AlGaAs/GaAs HBTs can be expected to extend to future ultrahigh-speed optical transmission systems.

• 社団法人電子情報通信学会の論文
• 1995-08-25

著者

• Sugiyama Takatoshi

  Wireless Labortories Ntt Docomo Inc.

• Obara M

  Laser Science Group The Institute Of Physical And Chemical Research (riken):(present Address)departm

• Sugiyama Tohru

  Toshiba Research and Development Center

• Kuriyama Yasuhiko

  Toshiba Research and Development Center

• Iizuka Norio

  Toshiba Research and Development Center

• Tsuda Kunio

  Toshiba Research and Development Center

• Morizuka Kouhei

  Toshiba Research and Development Center

• Obara Masao

  Toshiba Research and Development Center

• Sugiyama T

  Wireless Labortories Ntt Docomo Inc.

• Tsuda K

  Matsushita Electric Industrial Co. Ltd. Moriguchi‐shi Jpn

• Obara Masao

  Toshiba R & D Center

• Morizuka K

  Toshiba Research And Development Center

• Kuriyama Y

  Toshiba Corp. Kawasaki‐shi Jpn

• Sugiyama Tsunetoshi

  Department Of Applied Physics Tokyo University Of Agriculture And Technology:(present Address) Depar

• Tsuda Kunio

  Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan

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