Negative Transconductance in AlGaAs/GaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• Negative transconductance has been observed and analyzed for the first time in AlGaAs/GaAs HBTs when V_<BE> is larger than 1.7 volts. A newly developed equivalent circuit model with an additional external base-emitter diode and a temperature-dependent resistor which corresponds to the intrinsic base resistance is proposed on the basis of experimental data for a pulse-biased I-V characteristic and temperature dependence of the sheet resistance for p-GaAs layers. Using this model, it is shown that negative transconductance is one of the novel characteristics in HBTs and is attributed to the drop in the input voltage across the intrinsic base resistance which increases with the input power through heat generation.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Obara Masao

  Toshiba Research and Development Center

• Obara Masao

  Toshiba R & D Center

• Nozu Tetsuro

  Toshiba R & D Center

関連論文

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• Changes in Collector and Base Currents for AlGaAs/GaAs Heterojunction Bipolar Transistors
• Ultra-Low Resistance Base Ohmic Contact with Pt/Ti/Pt/Au for High-f_ AlGaAs/GaAs Heterojunction Bipolar Tramsistors
• Carrier Passivation in Heavily Doped GaAs:Be by Hydrogen Plasma ( Plasma Processing)
• Negative Transconductance in AlGaAs/GaAs Heterojunction Bipolar Transistors

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